Magnetic tunnel junction structures and methods of fabrication
US7504266B2 · kind B2 · utility
2Cited by
34References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2005 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Oct 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and having reduced surface roughness to improve the hysteresis loop characteristics of the resulting MTJ structure. The bottom electrode layer may also combine the functions of both the seeding layer and bottom electrode of the conventional two-layer structure, thereby simplifying the manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.