Technique for forming the deep doped regions in superjunction devices
US7504305B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 31, 2006 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Feb 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is disclosed and starts with a semiconductor substrate having a heavily doped N region at the bottom main surface and having a lightly doped N region at the top main surface. There are a plurality of trenches in the substrate, with each trench having a first extending portion extending from the top main surface towards the heavily doped region. Each trench has two sidewall surfaces in parallel alignment with each other. A blocking layer is formed on the sidewalls and the bottom of each trench. Then a P type dopant is obliquely implanted into the sidewall surfaces to form P type doped regions. The blocking layer is then removed. The bottom of the trenches is then etched to remove any implanted P type dopants. The implants are diffused and the trenches are filled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.