Schottky barrier source/drain n-mosfet using ytterbium silicide
US7504328B2 · kind B2 · utility
3Cited by
5References
7Claims
0Family size
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Key dates
| Filing date | May 10, 2005 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Dec 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.