Inventor · Singapore, SG

Ming Li

20Patents
9h-index
34Co-inventors
71Inventor score

Filing activity: Mar 17, 2004 → Apr 1, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US7427788B2 Multi bridge channel field effect transistors with nano-wire channels and methods of manufacturing the same Electricity 139 Expired
US7374986B2 Method of fabricating field effect transistor (FET) having wire channels Electricity 85 Active
US7002175B1 Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integration Electricity 76 Expired
US7396730B2 Integrated circuit devices including an L-shaped depletion barrier layer adjacent opposite sides of a gate pattern and methods of forming the same Electricity 44 Expired
US7332386B2 Methods of fabricating fin field transistors Electricity 37 Expired
US7274051B2 Field effect transistor (FET) having wire channels and method of fabricating the same Electricity 31 Expired
US7361545B2 Field effect transistor with buried gate pattern Electricity 16 Active
US8815702B2 Methods of manufacturing semiconductor devices having a support structure for an active layer pattern Electricity 9 Active
US8124961B2 Single electron transistor Emerging Cross-Sectional Technologies 9 Active
US7389664B1 Electromagnetic forming device for sheet of material Emerging Cross-Sectional Technologies 6 Active
US8528376B2 Mold set for manufacturing case and the method thereof Emerging Cross-Sectional Technologies 4 Active
US7504328B2 Schottky barrier source/drain n-mosfet using ytterbium silicide Electricity 3 Expired
US7858457B2 Methods of forming integrated circuit devices including a depletion barrier layer at source/drain regions Electricity 3 Active
US8426901B2 Semiconductor devices having a support structure for an active layer pattern Electricity 2 Active
US7955932B2 Single electron transistor and method of manufacturing the same Emerging Cross-Sectional Technologies 2 Active
US7989854B2 Semiconductor devices having a support structure for an active layer pattern Electricity 1 Active
US7579657B2 Semiconductor device with multiple channels Electricity 0 Active
US8008141B2 Method of fabricating a semiconductor device with multiple channels Electricity 0 Active
US7514360B2 Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof Electricity 0 Expired
US8680588B2 Field effect transistor with buried gate pattern Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.