Phase change memories with improved programming characteristics
US7504675B2 · kind B2 · utility
5Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2007 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Apr 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/24
Abstract
A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.