Integrated electronic circuit incorporating a capacitor
US7504683B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 15, 2006 |
| Grant date | Mar 17, 2009 |
| Priority date | — |
| Expiry date | Feb 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/367
Abstract
A non-volatile memory element includes a transistor for selecting the element and a capacitor for recording a binary value by electrical breakdown of an insulating layer (13) of the capacitor. A structure of the memory element is modified in order to allow a higher degree of integration of the element within an electronic circuit of the MOS type. In addition, the memory element is made more robust with respect to a high electrical voltage (VDD) used for recording the binary value. The transistor includes a drain in the substrate with electric field drift in a longitudinal direction extending towards the capacitor. The electric field drift region for the drain includes a first extension underneath the gate of the transistor opposite the source and a second extension underneath the insulating layer of the capacitor. Doping of the substrate for the electric field drift region is limited to a region substantially corresponding to a distance between the gate and an electrode of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.