Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby
US7507292B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2003 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Dec 6, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/403
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.