Ultra-thin die and method of fabricating same
US7507638B2 · kind B2 · utility
98Cited by
23References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2004 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Feb 18, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.