Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure
US7507652B2 · kind B2 · utility
5Cited by
2References
31Claims
0Family size
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Key dates
| Filing date | Jul 7, 2005 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Sep 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some methods that are provided form a composite dielectric structure on a substrate. A first dielectric layer that includes metal and oxygen is formed on a substrate. A preliminary dielectric layer that includes silicon is formed on the first dielectric layer. A plasma nitriding treatment is performed on the preliminary dielectric layer to change it into a second dielectric layer. The composite dielectric structure includes the second dielectric layer and the first dielectric layer. Other methods form a semiconductor device that includes the composite dielectric structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.