Method of fabricating metal compound dots dielectric piece
US7507653B2 · kind B2 · utility
2Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2006 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Nov 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating a dielectric piece which includes metal compound dots is provided. A stacked layer formed over the substrate includes a metal compound layer and an energy barrier layer. A process such as an oxidization annealing process is then performed so that the metal compound layer is transformed into a great number of crystalline metal compound dots distributed in the energy barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.