Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition
US7507666B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2005 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Nov 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film having a concave portion is formed on a semiconductor substrate. The inner surface of the concave portion and the upper surface of the insulating film are covered with an auxiliary film made of Cu alloy containing a first metal element other than Cu. A conductive member containing Cu as a main composition is deposited on the auxiliary film, the conductive member being embedded in the concave portion. Heat treatment is performed in an atmosphere containing P compound, Si compound or B compound. With this method, a content of element other than Cu in the conductive member can be reduced and a resistivity can be lowered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.