Beam line architecture for ion implanter
US7507978B2 · kind B2 · utility
5Cited by
26References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Jun 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A parallelizing component of an ion implantation system comprises two angled dipole magnets that mirror one another and serve to bend an ion beam traversing therethrough to have a substantially “s” shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer, such as implant angle, for example. Additionally, a deceleration stage is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamline to mitigate beam blowup.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.