Spin transfer MRAM device with magnetic biasing
US7508042B2 · kind B2 · utility
46Cited by
10References
4Claims
0Family size
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Key dates
| Filing date | Dec 22, 2006 |
| Grant date | Mar 24, 2009 |
| Priority date | — |
| Expiry date | Jan 20, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The addition of segmented write word lines to a spin-transfer MRAM structure serves to magnetically bias the free layer so that the precessional motion of the magnetization vector that is set in play by the flow of spin polarized electrons into the free layer allows said magnetic vector to be switched rather than to oscillate between two easy axis directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.