Patent assignee · US · COMPANY

MagIC Technologies, Inc.

118Patents
107Active
118Granted
58Portfolio score

Filing activity: Jul 12, 2005 → May 4, 2013 · 92 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US8334213B2 Bottom electrode etching process in MRAM cell Electricity 104 Active
US7948044B2 Low switching current MTJ element for ultra-high STT-RAM and a method for making the same Emerging Cross-Sectional Technologies 89 Active
US7750421B2 High performance MTJ element for STT-RAM and method for making the same Electricity 88 Active
US7863060B2 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices Electricity 81 Active
US7936027B2 Method of MRAM fabrication with zero electrical shorting Electricity 74 Active
US7696551B2 Composite hard mask for the etching of nanometer size magnetic multilayer based device Emerging Cross-Sectional Technologies 71 Active
US8592927B2 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications Electricity 67 Active
US8470462B2 Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions Emerging Cross-Sectional Technologies 65 Active
US7480173B2 Spin transfer MRAM device with novel magnetic free layer Emerging Cross-Sectional Technologies 57 Active
US7595520B2 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same Electricity 56 Active
US7852662B2 Spin-torque MRAM: spin-RAM, array Physics 54 Active
US8138561B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM Electricity 53 Active
US8492169B2 Magnetic tunnel junction for MRAM applications Electricity 49 Active
US7929370B2 Spin momentum transfer MRAM design Electricity 47 Active
US7508042B2 Spin transfer MRAM device with magnetic biasing Physics 46 Active
US8080432B2 High performance MTJ element for STT-RAM and method for making the same Electricity 45 Active
US7630232B2 Synthetic anti-ferromagnetic structure with non-magnetic spacer for MRAM applications Electricity 43 Active
US8541855B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications Physics 41 Active
US8184411B2 MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application Emerging Cross-Sectional Technologies 40 Active
US8105948B2 Use of CMP to contact a MTJ structure without forming a via Electricity 37 Active
US7345911B2 Multi-state thermally assisted storage Physics 33 Expired
US7598579B2 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current Electricity 32 Active
US7486545B2 Thermally assisted integrated MRAM design and process for its manufacture Physics 32 Expired
US7479394B2 MgO/NiFe MTJ for high performance MRAM application Electricity 31 Active
US7528457B2 Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R Electricity 30 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.