Method of forming a MIM capacitor

US7510944B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Venkat Raghavan · Fryeburg, US
• Andrew Strachan · Santa Clara, US

Key dates

• Filing date: May 10, 2007
• Grant date: Mar 31, 2009
• Expiry date: May 10, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

In a method of forming MIM capacitor structure, a TiW layer is formed and a capacitor mask is used to define areas of the TiW layer that will be sued in the formation of the MIM capacitor. A capacitor mask is then used to expose surface areas of the TiW layer, followed by deposition of a capacitor dielectric layer. A via mask and etch are then performed to provide a contact via to the bottom plate TiW layer. After the via etch, a Ti/TiN liner stack is deposited. The Ti/TiN multilayer stacked film serves as the capacitor top plate as well as the via contact liner film. Next, Tungsten is deposited to fill the vias and a Tungsten planarization step is performed.