Method for manufacturing a semiconductor device having trenches defined in the substrate surface
US7510975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2005 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Dec 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the method for manufacturing a semiconductor device according to the invention including the step of forming trenches having the depth thereof in perpendicular to the major surface of a semiconductor substrate, the step of forming trenches includes the steps of performing trench etching using an insulator film, formed on the major surface of the semiconductor substrate and shaped with a predetermined pattern, for a mask to form the trenches; etching the inside of the trenches using a halogen containing gas to smoothen the inside of the trenches; and thermally treating in a non-oxidizing and non-nitriding atmosphere. The manufacturing method according to the invention facilitates well removing the etching residues remaining in the trenches and rounding the trench corners properly when the trenches are 2 μm or narrower in width and even when the trenches are 1 μm or narrower in width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.