Charged particle beam writing method and apparatus
US7511290B2 · kind B2 · utility
10Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Nov 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31793
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for writing a pattern on a workpiece by use of a charged particle beam, the method includes calculating a corrected dose including at least a proximity effect correction dose for correction of proximity effect, calculating a corrected residual difference-corrected dose for correcting a correction residual difference of the corrected dose, calculating a exposure dose of the charged particle beam to be corrected by the corrected dose as corrected by the correction residual difference-corrected dose, and irradiating the charged particle beam onto the workpiece in such a way as to become the exposure dose.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.