Patent · US Active

Dual die package with high-speed interconnect

US7511359B2 · kind B2 · utility

9Cited by
7References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 29, 2005
Grant dateMar 31, 2009
Priority date—
Expiry dateJan 20, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/30107
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Embodiments of the invention relate to the construction of a dual die package with a high-speed interconnect. A package is created having a first die on a first side of a base substrate and a second die on a second side of the base substrate in opposed relation to the first die. A first copper plated interconnect is plated to the base substrate. Second copper interconnects are formed to connect the first copper plated interconnect to the first and second dice, respectively, such that the first and second dice are interconnected.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.