High-frequency power amplifier
US7511575B2 · kind B2 · utility
13Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2007 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Mar 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/21178
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.