Patent · US Active

Memory and method for improving the reliability of a memory having a used memory region and an unused memory region

US7512023B2 · kind B2 · utility

0Cited by

15References

10Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Manfred Proell · Dorfen, DE
Stephan Schroeder · Munich, DE

Key dates

Filing date	Sep 29, 2006
Grant date	Mar 31, 2009
Priority date	—
Expiry date	Sep 29, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C29/88
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for improving the reliability of a memory having a used memory region and an unused memory region, wherein defect memory elements in the used memory region can be substituted by functional memory elements in the unused memory region, having the steps of providing the used memory region with a first stress sequence; and providing the unused memory region with a second stress sequence.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.