Integrated semiconductor laser device and method of fabricating the same
US7512167B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2005 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Jul 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.