Method for measuring thin layers in solid state devices
US7512518B2 · kind B2 · utility
0Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2007 |
| Grant date | Mar 31, 2009 |
| Priority date | — |
| Expiry date | Jul 19, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B17/02
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of using acoustic signals in the form of waves or pulses to non-destructively measure the thickness of a bonding layer sandwiched between and bonding together overlying and underlying materials different from the bonding layer especially when the thickness of the bonding layer is so small that the features (maxima, minima, time position) of the echo from the interface of the bonding layer and the overlying material is indistinguishable, i.e., not independently observable from the features (maxima, minima, time position) of the echo from the interface of the bonding layer and the underlying material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.