Method of forming a cavity by two-step etching and method of reducing dimension of a MEMS device
US7514287B2 · kind B2 · utility
9Cited by
1References
14Claims
0Family size
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Key dates
| Filing date | Mar 15, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | May 1, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0133
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for reducing dimension of an MEMS device. A single crystalline substrate having a diaphragm is provided. A first-step anisotropic dry etching process is performed to form an opening corresponding to the diaphragm in the back surface, the anisotropic dry etching stopping on a specific lattice plane extending from the edge of the diaphragm. A second-step anisotropic wet etching process is performed to etch the single crystalline substrate along the specific lattice plane until the diaphragm is exposed to form a cavity having a diamond-like shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.