Dual work function metal gate structure and related method of manufacture
US7514310B2 · kind B2 · utility
7Cited by
4References
40Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 29, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jun 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and/or fluorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.