Methods of forming capacitor structures having aluminum oxide diffusion barriers
US7514315B2 · kind B2 · utility
6Cited by
1References
8Claims
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Key dates
| Filing date | Apr 11, 2007 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Sep 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.