Multilayer interconnection structure and method for forming the same
US7514355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jun 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer interconnection structure of the present invention includes first interconnection, second interconnection belonging to an interconnection layer different from an interconnection layer to which the first layer belongs, and third interconnection for connecting the first and second interconnections, the third interconnection belonging to a different interconnection layer and including interconnection along a body diagonal for connecting two points in different planes belong to different interconnection layers. A method for producing the multilayer interconnection structure includes a step of forming the third interconnection, the step including a step of forming a through hole along the body diagonal, and a step of filling the through hole with a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.