Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof
US7514360B2 · kind B2 · utility
0Cited by
14References
24Claims
0Family size
Inventors
Key dates
| Filing date | Mar 17, 2004 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Oct 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.