Manufacture of semiconductor device having nitridized insulating film
US7514376B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 18, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jan 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is disclosed which enables to suppress decrease in the mobility in a channel region by suppressing piercing of boron through a gate insulation film which boron is ion-implanted into a gate electrode. The method for manufacturing a semiconductor device includes: a step for forming a gate insulating layer on an active region of a semiconductor substrate; a step for introducing nitrogen through the front surface of the gate insulating layer using active nitrogen; and a step for conducting an annealing treatment in an NO gas atmosphere so that the nitrogen concentration distribution in the nitrogen-introduced gate insulating layer is high on the front surface side and low on the side of the interface with the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.