Electrical process monitoring using mirror-mode electron microscopy
US7514681B1 · kind B1 · utility
86Cited by
10References
32Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 13, 2006 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Mar 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
One embodiment relates to a method of inspecting a substrate using electrons. Mirror-mode electron-beam imaging is performed on a region of the substrate at multiple voltage differences between an electron source and a substrate, and image data is stored corresponding to the multiple voltage differences. A calculation is made of a measure of variation of an imaged aspect of a feature in the region with respect to the voltage difference between the electron source and the substrate. Other embodiments and features are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.