Semiconductor device
US7514753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2007 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jun 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises n-type and p-type semiconductor devices formed on the substrate, the n-type device including an n-channel region formed on the substrate, n-type source and drain regions formed opposite to each other interposing the n-channel region therebetween, a first gate insulator formed on the n-channel region, and a first gate electrode formed on the first gate insulator and including a compound of a metal M and a first group-IV elements Si1-a Gea (0≦a≦1), the p-type device including a p-channel region formed on the substrate, p-type source and drain regions formed opposite to each other interposing the p-channel region therebetween, a second gate insulator formed on the p-channel region, and a second gate electrode formed on the second gate insulator, and including a compound of the metal M and a second group-IV element Si1-c Gec (0≦c≦1, a≠c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.