MEMS structure having a stress inverter temperature-compensated resonating member
US7514853B1 · kind B1 · utility
20Cited by
2References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2007 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | May 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/02503
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A MEMS structure having a temperature-compensated resonating member is described. The MEMS structure comprises a stress inverter member coupled with a substrate. A resonating member is housed in the stress inverter member and is suspended above the substrate. The MEMS stress inverter member is used to alter the thermal coefficient of frequency of the resonating member by inducing a stress on the resonating member in response to a change in temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.