Method of programming a memory cell array using successive pulses of increased duration
US7515459B2 · kind B2 · utility
14Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | Jun 19, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a memory array including a plurality of memory cells is provided. The memory cells may include phase-change memory elements. In one aspect, the method includes applying in succession first through nth current pulses to each of the memory cells to be programmed to a first state (e.g., a crystalline state), where a current amplitude of the first through nth current pulses decreases with each successive pulse, and where a pulse duration of the first through nth current pulses increases with each successive pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.