Non-volatile memory device and data read method and program verify method of non-volatile memory device
US7515476B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2007 |
| Grant date | Apr 7, 2009 |
| Priority date | — |
| Expiry date | May 19, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes an even bit line and an odd bit line, a first register, a second register, a first precharge unit, a second precharge unit and a bit line select unit. The even bit line and the odd bit line are connected to a memory cell array. The first register is connected to the even bit line and configured to store specific data. The second register is connected to the odd bit line and configured to store specific data. The first precharge unit precharges an even sense node, formed at a node of the even bit line and the first register, with a high level or supplies supplementary current to the even sense node. The second precharge unit precharges an odd sense node, formed at a node of the odd bit line and the second register, with a high level or supplies supplementary current to the odd sense node. The bit line select unit connects the even bit line and the even sense node and connects the odd bit line and the odd sense node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.