Metal oxide semiconductor transistor with Y shape metal gate and fabricating method thereof
US7517746B2 · kind B2 · utility
23Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2007 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Sep 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a metal oxide semiconductor transistor having a metal gate is provided. The method firstly includes a step of providing a substrate. A dummy gate is formed on the substrate, a spacer is formed around the dummy gate, and doped regions are formed in the substrate outside of the dummy gate. A bevel edge is formed on the spacer, and a trench is formed in the inner sidewall of the spacer. A barrier layer, and a metal gate are formed in the trench and on the bevel edge, and the barrier layer will not form poor step coverage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.