Method for forming germanides and devices obtained thereof
US7517765B2 · kind B2 · utility
7Cited by
2References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 8, 2006 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Sep 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a substrate having topography, performing a first thermal step to convert substantially all deposited nickel in regions away from the topography into a germanide, selectively removing the unreacted nickel, and performing a second thermal step to lower the resistance of formed germanide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.