Forming conductive stud for semiconductive devices
US7517767B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 14, 2006 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Nov 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor device; selectively etching an opening down through the protective layer reaching a contact area of the semiconductor device, the opening being away from a protected area of the semiconductor device; and filling the opening with a conductive material to form the conductive stud. One embodiment may further include forming a dielectric liner directly on top of the semiconductor device, and forming the protective layer on top of the dielectric liner. Embodiments of the present invention also provide a semiconductor device made thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.