Integrateable capacitors and microcoils and methods of making thereof
US7517769B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2005 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Dec 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for integrally forming high Q tunable capacitors and high Q inductors on a substrate are described. A method for integrally forming a capacitor and a microcoil on a substrate may involve depositing and patterning a dielectric layer on the substrate, depositing and patterning a sacrificial layer on the substrate, depositing and patterning conductive material on the semiconductor substrate, depositing and patterning a polymer layer on the semiconductor substrate, removing an exposed portion of the conductive material exposed by the patterned polymer layer to release a portion of the conductive pattern from the semiconductor substrate to form out-of-plane windings of the microcoil, depositing second conductive material on exposed portions of the conductive material, and removing the sacrificial layer. The patterned conductive material may include a windings portion of the microcoil, an overlapping electrode portion of the capacitor and a support portion for the electrode of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.