Field-effect microelectronic device, capable of forming one or several transistor channels

US7518195B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Thomas Ernst · Morette, FR
• Stephan Borel · Crolles, FR

Key dates

• Filing date: Oct 21, 2004
• Grant date: Apr 14, 2009
• Expiry date: Dec 4, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6748

Abstract

The invention relates to a field-effect microelectronic device, and the production method thereof. Said device comprises a substrate (700) and at least one improved structure (702), capable of forming one or several transistor channels. Said structure, composed of several bars stacked on the substrate, may allow space saving in the integration of field-effect transistors and the performances thereof to be improved.