Magneto-resistive element
US7518906B2 · kind B2 · utility
4Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2006 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Feb 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.