Phase change memory with program/verify function
US7518934B2 · kind B2 · utility
8Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2007 |
| Grant date | Apr 14, 2009 |
| Priority date | — |
| Expiry date | Mar 23, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0054
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory includes a plurality of cells for storing data in the form of respective resistance levels, addressing circuits for addressing cells to be programmed, and the resistance levels are determined from comparison of cell currents of addressed cells with a reference current. A reference generator provides the sense amplifier with the reference current. The reference generator is provided with a reference select circuit to select the reference current from a plurality of verify currents based on program data to be stored in the cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.