Inventor · Rancho Cordova, CA, US

Richard E. Fackenthal

90Patents
11h-index
41Co-inventors
78Inventor score

Filing activity: Jun 3, 1994 → Sep 18, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6870767B2 Variable level memory Physics 85 Expired
US6643169B2 Variable level memory Physics 82 Expired
US7356755B2 Error correction for multi-level cell memory with overwrite capability Physics 79 Expired
US5497355A Synchronous address latching for memory arrays Physics 49 Expired
US6549457B1 Using multiple status bits per cell for handling power failures during write operations Physics 36 Expired
US7577024B2 Streaming mode programming in phase change memories Physics 33 Active
US8605490B2 Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process Physics 23 Active
US5586081A Synchronous address latching for memory arrays Physics 19 Expired
US10431281B1 Access schemes for section-based data protection in a memory device Electricity 14 Active
US9336875B2 Memory systems and memory programming methods Physics 13 Active
US6748482B1 Multiple non-contiguous block erase in flash memory Physics 12 Expired
US8977929B2 Rearranging write data to avoid hard errors Physics 11 Active
US5563843A Method and circuitry for preventing propagation of undesired ATD pulses in a flash memory device Physics 11 Expired
US9837151B2 Memory systems and memory programming methods Physics 11 Active
US6625716B2 Method apparatus, and system for efficient address and data protocol for a memory Physics 10 Expired
US7940553B2 Method of storing an indication of whether a memory location in phase change memory needs programming Physics 9 Active
US7848138B2 Biasing a phase change memory device Physics 8 Active
US7518934B2 Phase change memory with program/verify function Physics 8 Active
US10311953B2 Memory systems and memory programming methods Physics 7 Active
US10403389B2 Array plate short repair Physics 7 Active
US10416903B2 Wear leveling Physics 6 Active
US7885099B2 Adaptive wordline programming bias of a phase change memory Emerging Cross-Sectional Technologies 5 Active
US10855295B2 Access schemes for section-based data protection in a memory device Electricity 5 Active
US9941021B2 Plate defect mitigation techniques Physics 4 Active
US11348928B1 Thin film transistor random access memory Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.