Plasma treatment apparatus
US7520244B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2004 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Mar 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32183
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for transmitting radio-frequency power to one of the parallel-plate electrodes via multiple supply points provided on the one of the parallel-electrodes. The radio-frequency power supply system includes a radio-frequency transmission unit which includes an inlet transmission path and multiple branches branched off from the inlet transmission path multiple times. Each branch is connected to the supply point and has a substantially equal characteristic impedance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.