Light-emitting devices with fullerene layer
US7521113B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Mar 29, 2004 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Oct 24, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides a layered structure including a fullerene layer exhibiting Ohmic behavior. The layered device includes a layer of fullerenes and a layer of a fluoride compound of pre-selected thickness. The layered structure includes a third layer of an electrically conductive material located on the second layer to which electrical contact can be made. The thickness of the second layer is selected so that the layered structure exhibits substantially Ohmic contact across the first, second and third layers. The present invention also provides a light-emitting device which includes a substrate and a first electrically conductive layer defining an anode electrode layer on the substrate. The device includes an electron transport layer which includes fullerenes, and a second electrically conductive layer defining a cathode electrode layer on the electron transport layer. The device includes a layer of light-emissive material between the anode electrode layer and the electron transport layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.