Zheng Lu
33Patents
5h-index
52Co-inventors
72Inventor score
Filing activity: Jun 26, 2001 → Jun 14, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8742152B2 | Preparation of metal-catecholate frameworks | Chemistry; Metallurgy | 14 | Active |
| US6554898B2 | Crystal puller for growing monocrystalline silicon ingots | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7125450B2 | Process for preparing single crystal silicon using crucible rotation to control temperature gradient | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7358538B2 | Organic light-emitting devices with multiple hole injection layers containing fullerene | Electricity | 6 | Expired |
| US7521113B2 | Light-emitting devices with fullerene layer | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7223304B2 | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6663709B2 | Crystal puller and method for growing monocrystalline silicon ingots | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8853070B2 | Functionalization of a substrate | Emerging Cross-Sectional Technologies | 3 | Active |
| US10439081B2 | Method for depositing a conductive coating on a surface | Emerging Cross-Sectional Technologies | 3 | Active |
| US7611580B2 | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field | Emerging Cross-Sectional Technologies | 2 | Active |
| US11111602B2 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Electricity | 1 | Active |
| US9698386B2 | Functionalization of a substrate | Emerging Cross-Sectional Technologies | 1 | Active |
| US9139917B2 | Transparent conductive porous nanocomposites and methods of fabrication thereof | Emerging Cross-Sectional Technologies | 1 | Active |
| US6960254B2 | Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7573587B1 | Method and device for continuously measuring silicon island elevation | Chemistry; Metallurgy | 1 | Active |
| US10597413B2 | Silicone-compatible compounds | Chemistry; Metallurgy | 1 | Active |
| US9045387B2 | Oxidative homo-coupling reactions of aryl boronic acids using a porous copper metal-organic framework as a highly efficient heterogeneous catalyst | Chemistry; Metallurgy | 1 | Active |
| US12428750B2 | Ingot puller apparatus having silicon feed tubes with kick plates | Chemistry; Metallurgy | 0 | Active |
| US10290833B2 | Functionalization of a substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US11532763B2 | Method for depositing a conductive coating on a surface | Emerging Cross-Sectional Technologies | 0 | Active |
| US11753741B2 | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size | Electricity | 0 | Active |
| US12227874B2 | Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy | Physics | 0 | Active |
| US11959189B2 | Process for preparing ingot having reduced distortion at late body length | Chemistry; Metallurgy | 0 | Active |
| US12018400B2 | Methods and systems of capturing transient thermal responses of regions of crystal pullers | Chemistry; Metallurgy | 0 | Active |
| US11764320B2 | Method for depositing a conductive coating on a surface | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.