Method for forming a semiconductor product and semiconductor product

US7521351B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Mikolajick · Birkenfeld, DE
• Torsten Mueller · Zirndorf, DE
• Nicolas Nagel · Yokohama, JP
• Lars Bach · Ullersdorf, DE
• Dominik Olligs · Dresden, DE
• Veronika Polei · Dresden, DE

Key dates

• Filing date: Jun 30, 2005
• Grant date: Apr 21, 2009
• Expiry date: May 26, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor product includes, a substrate with a first dielectric layer having contact hole fillings for contacting active areas in the substrate. A second dielectric layer with contact holes is provided therein. The contact holes have a width in a first lateral direction. The product further includes conductive lines, each conductive line passing over contact holes in the second dielectric layer and contacting a plurality of contact hole fillings in the first dielectric layer. The conductive lines have a width, in the first lateral direction, that is smaller than the width of the contact holes of the second dielectric layer. The conductive lines are in direct mechanical contact with the contact hole fillings and thereby remove the need to provide any conventional “contact to interconnect” structures.