Manufacturing method of semiconductor device
US7521383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2006 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Dec 3, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
Abstract
A first layer (an insulating layer), a second layer (a metal layer), and a third layer (an insulating layer) are formed over a substrate. Then, a fourth layer including a semiconductor element is formed over the third layer. After applying an organic resin film covering the fourth layer, laser light is irradiated to sections of a rear surface side of the substrate. By irradiating the second layer with laser light, the state of being covered with the organic resin film can be maintained at the same time as forming a space under the organic resin film by ablating (alternatively, evaporating or breaking down) an irradiated region of the second layer, to cause a lift in the film in a periphery thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.