Reproducible resistance variable insulating memory devices having a shaped bottom electrode
US7521705B2 · kind B2 · utility
91Cited by
2References
31Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 15, 2005 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Jan 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the bottom electrode is thinnest, creating the largest electric field at the tip of the bottom electrode. The arrangement of electrodes and the structure of the memory element makes it possible to create conduction paths with stable, consistent and reproducible switching and memory properties in the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.