DMOS transistor with optimized periphery structure

US7521756B2 · kind B2 · utility

Assignee

• ATMEL Germany GmbH · DE

Inventors

• Franz Dietz · Heilbronn, DE
• Michael Graf · Leutenbach, DE
• Stefan Schwantes · Heilbronn, DE

Key dates

• Filing date: Dec 11, 2006
• Grant date: Apr 21, 2009
• Expiry date: Jan 2, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A lateral DMOS transistor is disclosed that includes a first region of a first conductivity type, which is surrounded on the sides by a second region of a second conductivity type, whereby a boundary line between both regions has opposite straight sections and curved sections linking the straight sections, and with a first dielectric structure, which serves as a field region and is embedded in the first region and surrounds a subregion of the first region. Whereby the first distance between the first dielectric structure and the boundary line is greater along the straight sections than along the curved sections.