Power device with improved edge termination
US7521773B2 · kind B2 · utility
30Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2006 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Oct 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A field effect transistor includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.