Inventor · San Jose, CA, US

Daniel Calafut

56Patents
18h-index
30Co-inventors
84Inventor score

Filing activity: Apr 12, 1996 → Aug 18, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US6461918B1 Power MOS device with improved gate charge performance Electricity 91 Expired
US6534825B2 Power MOS device with improved gate charge performance Electricity 64 Expired
US7504306B2 Method of forming trench gate field effect transistor with recessed mesas Electricity 64 Active
US7393749B2 Charge balance field effect transistor Electricity 62 Active
US7504303B2 Trench-gate field effect transistors and methods of forming the same Electricity 61 Active
US7625793B2 Power MOS device with improved gate charge performance Electricity 53 Expired
US5602046A Integrated zener diode protection structures and fabrication methods for DMOS power devices Emerging Cross-Sectional Technologies 52 Expired
US6673680B2 Field coupled power MOSFET bus architecture using trench technology Electricity 39 Expired
US6396102B1 Field coupled power MOSFET bus architecture using trench technology Electricity 35 Expired
US5767550A Integrated zener diode overvoltage protection structures in power DMOS device applications Emerging Cross-Sectional Technologies 31 Expired
US7521773B2 Power device with improved edge termination Electricity 30 Active
US7514322B2 Shielded gate field effect transistor Electricity 24 Active
US8809948B1 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 24 Active
US7416948B2 Trench FET with improved body to gate alignment Electricity 24 Active
US7625799B2 Method of forming a shielded gate field effect transistor Electricity 22 Active
US8951867B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 21 Active
US9190512B2 High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices Electricity 20 Active
US9136380B2 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications Electricity 18 Active
US7923776B2 Trench-gate field effect transistor with channel enhancement region and methods of forming the same Electricity 17 Active
US8174067B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics Electricity 16 Active
US8785278B2 Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Electricity 15 Active
US8043913B2 Method of forming trench-gate field effect transistors Electricity 13 Active
US9105494B2 Termination trench for power MOSFET applications Electricity 13 Active
US7768034B2 Tapered voltage polysilicon diode electrostatic discharge circuit for power MOSFETs and ICs Electricity 11 Active
US9356022B2 Semiconductor device with termination structure for power MOSFET applications Electricity 9 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.